050-4921 rev b 1-2013 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v gs (th) characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain voltage 1 (i d (on) = 3a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 3a) gate threshold voltage (v ds = v gs , i d = 50ma) min typ max 1200 8 25 250 100 3 4 3 5 unit volts a na mhos volts symbol v dss v dgo i d v gs p d r jc t j ,t stg t l parameter drain-source voltage drain-gate voltage continuous drain current @ t c = 25c gate-source voltage total power dissipation @ t c = 25c junction to case operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. arf465a/b(g) 1200 1200 6 30 250 0.50 -55 to 150 300 unit volts amps volts watts c/w c rf power mosfets n- channel enhancement mode 300v 150w 60mhz the arf465a and 465b comprise a symmetric pair of common source rf power transistors designed for push-pull scienti ? c, commercial, medical and industrial rf power ampli ? er applications up to 60 mhz. speci? ed 300 volt, 40.68 mhz characteristics: output power = 150 watts. gain = 13db (class c) ef? ciency = 75% low cost common source rf package. low vth thermal coef? cient. low thermal resistance. optimized soa for superior ruggedness. arf465a(g) arf465b(g) *g denotes rohs compliant, pb free terminal finish commonsource caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. microsemi website - http://www.microsemi.com to-247 downloaded from: http:///
050-4921 rev b 1-2013 frequency (mhz) figure 1, typical gain vs frequency class c v dd = 300v p out = 150w gain (db) arf465a/b(g) 1 pulse test: pulse width < 380 s, duty cycle < 2% microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 1 10 100 1200 10 86 4 2 0 0 1 2 3 4 5 6 7 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 10,000 50001000 500100 5010 0.1 1 10 100 300 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss 2410 51 .5.1 1ms 10ms dc 100us 2520 15 10 50 10 20 30 40 50 60 70 80 90 100 dynamic characteristics symbol c iss c oss c rss t d(on) t r t d(off) t f characteristicinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 200v f = 1 mhz v gs = 15v v dd = 0.5v i d = i d[cont.] @ 25c r g = 1.6w min typ max 1200 1500 80 100 30 50 7 15 5 10 21 34 12 25 unit pf ns functional characteristics symbol g ps test conditions f = 40.68 mhz v gs = 0v v dd = 300v p out = 150w no degradation in output power characteristic common source ampli ? er power gain drain ef ? ciency electrical ruggedness vswr 6:1 min typ max 13 15 70 75 unit db % downloaded from: http:///
050-4921 rev b 1-2013 t c , case temperature (c) figure 5, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 0 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) arf465a/b(g) 5.5v 4.5v 5v 6v v gs =15v, 10v, 7v z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 9, typical maximum effective transient thermal impedance, junction-to-case vs pulse duration 6.5v 10 86 4 2 0 single pulse 0.5 0.1 0.3 0.7 0.9 0.05 1.21.1 1 0.90.8 0.7 0.6 -50 -25 0 25 50 75 100 125 0.600.50 0.40 0.30 0.20 0.10 0 figure 9a, transient thermal impedance model 0.02840.165 0.307 0.00155f0.00934f 0.128f power (watts) junction temp. ( c) rc model case temperature peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: table 1 - typical class ab large signal input - output impedance freq. (mhz) z in ( )z ol ( ) 2.0 13.5 2740 65 21.4 - j 8.7 2.6 - j 7.3.54 - j 2.9 .22 - j .69 .31 + j 1.65 206 - j 45 68 - j 9922 - j 64 10.5 - j 44 4.4 - j 27 z in - gate shunted with 25 i dq = 100ma z ol - conjugate of optimum load for 150 watts output at v dd = 300v downloaded from: http:///
050-4921 rev b 1-2013 to-247 package outline arf465a/b(g) l1 l2 c1 r2 r1 dut l3 l4 c3 c4 c7 c6 c2 c8 c9 l5 300v + - rf output rf input 40.68 mhz test circuit + - bias0 - 6v c1 - 1000pf 100v chip atc 700bc2-c5 - arco 463 mica trimmer c6-c8 - .01 f 500v ceramic chip c9 - 2200 pf cog 500 v chip l1 - 4t #20 awg .25"id .3"l ~110 nh l2 - 2t #20 awg .25"id .3"l ~ 25 nh l3-- 4t #16 awg .4" id .5"l ~290 nhl4 -- 25t #24 awg .35"id ~2uh l5-- vk200-4b ferrite choke 3uh r1-r2 -- 51 ohm 0.5w carbon dut = arf465a/b hazardous material warning: the ceramic portion of the device between leads and mounting ? ange is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. gate ------- drain source ---- source drain ------- gate device arf- a arf- b source note: these two parts comprise a symmetric pair of rf power transistors and meet the same electrical speci ? cations. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 .1855.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. downloaded from: http:///
050-4921 rev b 1-2013 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprieta ry and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modi ? ed, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an of ? cer of microsemi. microsemi reserves the right to change the con ? guration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to ? tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speci ? cations believed to be reliable but are not veri ? ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers ? nal application. user or customer shall not rely on any data and performance speci ? cations or parameters provided by microsemi. it is the customers and users re- sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speci ? cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro ? t. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp disclaimer: arf465a/b(g) downloaded from: http:///
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